Sr. MOCVD Engineer - GaN Power Devices


: $95,170.00 - $147,950.00 /year *

Employment Type

: Full-Time


: Engineering

Syracuse, NY

Full-time $100k - $200k
Posted 08/20/2019
If you are a Sr. MOCVD Engineer with GaN Wafer Growth experience, please read on! Job Title: Sr. MOCVD Engineer - GaN Power Devices Job Location: Syracuse, NY Compensation: $100K - $200K+ DOE
Top Reasons to Work with Us
1) Competitive Compensation ($100K - $200K+ DOE) 2) Comprehensive Benefits Package! 3) The chance to join the core team of a well-funded rapidly growing start-up! 4) Challenging work environment - work with some of the world's leading engineers in helping to develop cutting-edge GaN power devices!
What You Will Be Doing
- MOCVD process development, sustaining, characterization, operation and maintena ... * The salary listed in the header is an estimate based on salary data for similar jobs in the same area. Salary or compensation data found in the job description is accurate.

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